Samsung Electronics has announced that it is mass producing the industry’s first “through silicon via” (TSV) double data rate-4 (DDR4) memory in 128-gigabyte (GB) modules, for enterprise servers and data centers.
Samsung’s new TSV DRAM module boasts the largest capacity and the highest energy efficiency of any DRAM modules today, while operating at high speed and demonstrating excellent reliability.
The 128GB TSV DDR4 RDIMM is comprised of a total of 144 DDR4 chips, arranged into 36 4GB DRAM packages, each containing four 20-nanometer (nm)-based 8-gigabit (Gb) chips assembled with cutting-edge TSV packaging technology.
Samsung’s 128GB TSV DDR4 RDIMM provides a low-power solution for next-generation servers with speeds at up to 2,400 megabits per second (Mbps).
This article originally appeared on MyBroadband and is republished with permission.
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